features ? low on-state resistance ? fast switching ? low gate charge & low c rss ? fully characterized avalanche voltage and current ? specially desigened for ac adapter, battery charger and smps ? in compliance with eu rohs 2002/95/ec directives mechanical information ? case: to-252 / to-251 molded plastic ? terminals : solderable per mil-std-750,method 2026 marking & ordering information type marking package packing HY2N65D 2n65d to-252 2500pcs/reel hy2n65m 2n65m to-251 80pcs/tube absolute maximum ratings (t c =25c unless otherwise specified ) units v v t c =25 a a t c =25 w mj thermal characteristics units /w /w company reserves the right to improve product design HY2N65D hy2n65m drain-source voltage v ds 650 650v / 2a n-channel enhancement mode mosfet parameter symbol 650v, r ds(on) =4.6 w @v gs =10v, i d =1a gate-source voltage v gs i d 2 2 continuous drain current + 30 pulsed drain current 1) i dm 8 8 p d 43.8 0.35 43 0.35 maximum power dissipation derating factor avalanche energy with single pulse i as =2a, v dd =60v, l=50mh e as operating junction and storage temperature range t j, t stg -55 to +150 100 parameter symbol HY2N65D hy2n65m junction-to-case thermal resistance r q jc note : 1. maximum dc current limited by the package junction-to-case thermal resistance r q ja HY2N65D / hy2n65m 2.85 2.9 50 110 fig. 1 C forward current derating curve ambient temperature ( ) 25 50 75 100 125 150 175 single phase half wave 60hz fig. 2 C maximum non - 1 2 5 10 single 1 4 10 20 100 t 0 0.2 0.4 0.6 0.0 rev 1.0, 20 - sept - 2012 page.1 drain 1 source 2 gate 2 d 3 1 g 3 s 2 d 1 g 3 s to - 252 to - 251
symbol min. typ. max. units bv dss 650 - - v v gs(th) 2.0 - 4.0 v r ds(on) - 4.1 4.6 w i dss - - 10 ua i gss - - + 100 na qg - 6.4 8.6 qgs - 1.8 - qgd - 2.1 - t d(on) - 13.2 16 t r - 18.6 28 t d(off) - 22 38 t f - 16.8 32 c iss - 265 - c oss - 36 - c rss - 1.5 - i s - - 2.0 a i sm - - 8.0 a v sd - - 1.4 v t rr - 190 - ns q rr - 1.0 - uc note : pulse test : pulse width Q 300us, duty cycle Q 2% source-drain diode v gs =0v i s =2a di/dt=100a/us - - i s =2a v gs =0v max. pulsed source current diode forward voltage reverse recovery time turn-off delay time turn-off fall time input capacitance output capacitance reverse transfer capacitance reverse recovery charge max. diode forwad voltage pf v ds =25v v gs =0v f=1.0m hz static v gs =0v i d =250ua v ds =v gs i d =250ua v gs =10v i d =1a v ds =650v v gs =0v v gs = + 30v v ds =0v zero gate voltage drain current gate body leakage current gate-drain charge dynamic v ds =520v i d =2a v gs =10v nc turn-on delay time turn-on rise time ns v dd =325v i d =2a v gs =10v r g =25 w HY2N65D / hy2n65m electrical characteristics ( t c =25 test condition paramter drain-source breakdown voltage gate threshold voltage drain-source on-state resistance total gate charge gate-source charge page.2 rev 1.0, 20 - sept - 2012
HY2N65D / hy2n65m typical characteristics curves ( t c =25 , unless otherwise noted) 0 1 2 3 4 5 0 10 20 30 40 50 i d - drain - to - source current (a) v ds - drain - to - source voltage (v) 6.0v v gs = 20v~ 8.0v 5.0v 7.0v 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 r ds(on) - on resistance( w ) i d - drain current (a) v gs = 20v v gs =10v 0 100 200 300 400 500 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain - to - source voltage (v) ciss f = 1mhz v gs = 0v crss coss 0 2 4 6 8 10 12 4 5 6 7 8 9 10 r ds(on) - on resistance( w ) v gs - gate - to - source voltage (v) i d =1.0a 0.1 1 10 1 2 3 4 5 6 7 8 9 i d - drain source current (a) v gs - gate - to - source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c fig.1 output characteristric 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 v gs - gate - to - source voltage (v) q g - gate charge (nc) i d =2.0a v ds =520v v ds =325v v ds =130v fig.2 transfer characteristric fig.3 on - resistance vs drain current fig.4 on - resistance vs gate to source voltage fig.5 capacitance characteristic fig.6 gate charge characteristic page.3 rev 1.0, 20 - sept - 2012
HY2N65D / hy2n65m typical characteristics curves ( t c =25 , unless otherwise noted) 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 bv dss - breakdown voltage (normalized) t j - junction temperature ( o c) i d = 250 m a 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - to - drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0 0.5 1 1.5 2 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on - resistance (normalized) t j - junction temperature ( o c) v gs =10 v i d =1.0a fig.7 on - resistance vs junction temperature fig.8 breakdown voltage vs junction temperature fig.9 body diode forward voltage characteristic page.4 rev 1.0, 20 - sept - 2012
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